Equipment List

Lithography

EB Lithography [ELS-F125]

電子ビーム描画装置 [ELS-F125]
Manufacturer
Elionix
Model
ELS-F125
Location
Sengen Materials Reliability Bldg.
Overnight Operation
Installation Year
2014
Specification
Accelaration Voltage:125kV
Beam Current:100pA~5nA
Field Stitching Accuracy:<20nm
Overlay Accuracy:<25nm
Max Sample Size:Φ6 inch

EB Lithography [ELS-BODEN100]

電子ビーム描画装置 [ELS-BODEN100]
Manufacturer
Elionix
Model
ELS-BODEN100
Location
Namiki MANA Bldg.
Overnight Operation
Installation Year
2022
Specification
Accelaration Voltage:100kV
Beam Current:100pA~20nA
Field Stitching Accuracy:<30nm
Overlay Accuracy:<35nm
Max Sample Size:Φ8 inch

Laser Lithography [DWL66+]

レーザー描画装置 [DWL66+]
Manufacturer
Heidelberg Instruments
Model
DWL66+
Location
Sengen Materials Reliability Bldg.
Overnight Operation
Installation Year
2021
Specification
Lithography Method:Direct laser lithography
Light Source:375nm semiconductor laser
Resolution:0.3um (HiRes)
Positioning Accuracy:<0.5um
Overlay Accuracy:<0.5um
Max Sample Size:8 inch square

Maskless Lithography [DL-1000]

マスクレス露光装置 [DL-1000]
Manufacturer
Nanosystem Solutions
Model
DL-1000
Location
Namiki MANA Bldg.
Overnight Operation
Installation Year
2008
Specification
Lithography Method:DMD
Light Source:405nm semiconductor lase
Resolution:1um
Positioning Accuracy:<1um
Overlay Accuracy:<1um
Max Sample Size:4 inch square

Maskless Lithography [DL-1000/NC2P]

マスクレス露光装置 [DL-1000NC2P]
Manufacturer
Nanosystem Solutions
Model
DL-1000/NC2P
Location
Namiki MANA Bldg.
Overnight Operation
Installation Year
2014
Specification
Lithography Method:DMD
Light Source:405nm semiconductor laser
Resolution:1um
Positioning Accuracy:<1um
Overlay Accuracy:<1um
Max Sample Size:8 inch square

Maskless Lithography [MLA150]

マスクレス露光装置 [MLA150]
Manufacturer
Heidelberg Instruments
Model
MLA150
Location
Sengen Materials Reliability Bldg.
Overnight Operation
Installation Year
2023
Specification
Lithography Method:DMD
Light Source:375nm semiconductor laser
Resolution:1um
Positioning Accuracy:<±1um
Overlay Accuracy:<±1um
Max Sample Size:8 inch square

Mask Aligner [MA-6]

マスクアライナー [MA-6]
Manufacturer
Suss MicroTec
Model
MA-6
Location
Namiki MANA Bldg.
Overnight Operation
Installation Year
2007
Specification
Lithography Method:photo mask
Light Source:Hg lamp
Resolution:1um
Positioning Accuracy:<1um
Overlay Accuracy:<1um
Max Sample Size:Φ3 inch

Cleaning

H2O Plasma Cleaner [AQ-500 #1]

水蒸気プラズマ洗浄装置 [AQ-500]
Manufacturer
Samco
Model
AQ-500
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2021
Specification
High Frequency Output:50-250W
Reactive Gas:H2O,O2
Max Sample Size:Φ8 inch
 

H2O Plasma Cleaner [AQ-500 #2]

水蒸気プラズマ洗浄装置 [AQ-500 #2]
Manufacturer
Samco
Model
AQ-500
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2023
Specification
High Frequency Output:50-250W
Reactive Gas:H2O,O2
Max Sample Size:Φ8 inch
 

UV Ozone Cleaner [UV-1]

UVオゾンクリーナー [UV-1]
Manufacturer
Samco
Model
UV-1
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2007
Specification
Light Source:UV lamp
Ozone Generator:Silent electric discharge
Stage Temperature:Room temp~300℃
Max Sample Size:Φ8 inch
 

Deposition

Sputter [JSP-8000]

スパッタ装置 [JSP-8000]
Manufacturer
ULVAC
Model
JSP-8000
Location
Sengen Materials Reliability Bldg.
Overnight Operation
Installation Year
2007
Specification
Power Source:DC x 2, RF x 1
Power Output:500W
Targets:Φ4 inch×4 sets
Process Gas:Ar,O2,N2
Max Sample Size:Φ6 inch
Substrate Heating:Max. 300℃ (settable)

Sputter [CFS-4EP-LL #1]

スパッタ装置 [CFS-4EP-LL #1]_r
Manufacturer
Shibaura Mechatronics
Model
CFS-4EP-LL
Location
Namiki MANA Bldg.
Overnight Operation
Installation Year
2007
Specification
Power Source:DC x 2, RF x 1
Power Output:500W
Cathodes:Φ3 inch×4 sets
Process Gas:Ar, O2, N2
Max Sample Size:Φ6 inch
Substrate Heating:Max. 300℃ (settable)

Sputter [CFS-4EP-LL #2]

スパッタ装置 [CFS-4EP-LL #2]_r
Manufacturer
Shibaura Mechatronics
Model
CFS-4EP-LL
Location
Namiki MANA Bldg.
Overnight Operation
Installation Year
2011
Specification
Power Source:DC×2, RF×1
Power Output:500W
Cathodes:Φ3 inch×4 sets
Process Gas:Ar, O2, N2
Max Sample Size:Φ6 inch
Substrate Heating:Max. 300℃ (settable)

Sputter [CFS-4EP-LL #3]

スパッタ装置 [CFS-4EP-LL]
Manufacturer
Shibaura Mechatronics
Model
CFS-4EP-LL
Location
Sengen Materials Reliability Bldg.
Overnight Operation
Installation Year
2019
Specification
Power Source:DC x 1, RF x 2
Power Output:500W
Cathodes:Φ3 inch×4 sets
Process Gas:Ar, O2, N2
Max Sample Size:Φ8 inch
Substrate Heating:N/A (water-cooling)

EB Evaporator [RDEB-1206K]

電子銃型蒸着装置 [RDEB-1206K]
Manufacturer
R-DEC
Model
RDEB-1206K
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2008
Specification
Accelaration Voltage:10kV
Max Emission:500mA
T-S Distance:500mm
Vacuum Level:10-5 Pa
Max Sample Size:Φ6 inch
Materials:Ti, Au, Pd, Cu, Ag, Cr, SiO2, MgO, etc.

EB Evaporator [ADS-E86]

電子銃型蒸着装置 [ADS-E86]
Manufacturer
R-DEC
Model
ADS-E86
Location
Sengen Materials Reliability Bldg.
Overnight Operation
Installation Year
2021
Specification
Accelaration Voltage:6kV
Max Emission:500mA
T-S Distance:500mm
Vacuum Level:10-5 Pa
Max Sample Size:Φ8 inch
Materials:Ti, Au-Ge, Al, Ni, Au, Pt

EB Evaporator [MB-501010]

電子銃型蒸着装置 [MB-501010]
Manufacturer
ULVAC
Model
MB-501010
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2006
Specification
Accelaration Voltage:10kV
Max Emission:500mA
T-S Distance:700mm
Vacuum Level:10-5 Pa
Max Sample Size:Φ6 inch
Materials:Ag, Pd, Au, Pt, Al, Ti, Cr, Ni, etc.

EB Evaporator [UEP-3000BS]

電子銃型蒸着装置 [UEP-3000BS]
Manufacturer
Eiko Engineering
Model
UEP-3000BS
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2019
Specification
Accelaration Voltage:10kV
Max Emission:500mA
T-S Distance:500-700mm (adjustable)
Vacuum Level:10-5 Pa
Max Sample Size:Φ3 inch
Materials:Al,Ti,Pt,Cr,Ag,Au,Fe,Ni,Pd,Cu

ALD [SUNALE R-150]

原子層堆積装置 [SUNALE R-150]
Manufacturer
Picosun
Model
SUNALE R-150
Location
Namiki MANA Bldg.
Overnight Operation
Installation Year
2011
Specification
Film-Deposition Method:Thermal or plasma
Sources:TMA(Al2O3), TDMAT(TiO2), TDMAS(SiO2), TDMAHf(HfO2), ZrCp(ZrO2)
Max Sample Size:Φ6 inch
Substrate Heating:Room temp~300℃ (settable)

ALD [AD-230LP]

原子層堆積装置 [AD-230LP]
Manufacturer
Samco
Model
AD-230LP
Location
Sengen Materials Reliability Bldg.
Overnight Operation
Installation Year
2021
Specification
Film-Deposition Method:Thermal or plasma
Sources:TMA(Al2O3, AlN), TDMAT(TiO2, TiN), BDEAS,(SiO2, SiN)
Max Sample Size:Φ8 inch
Substrate Heating:Room temp~500℃ (settable)

SiO2 PECVD [PD-220NL]

SiO2プラズマCVD装置 [PD-220NL]
Manufacturer
Samco
Model
PD-220NL
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2022
Specification
Film-Deposition Method: 2-frequency plasma CVD
Sources:TEOS (SiO2)
Max Sample Size:8インチΦ
Substrate Heating:350℃ (default)

SiN PECVD [PD-220NL]

SiNプラズマCVD装置 [PD-220NL]
Manufacturer
Samco
Model
PD-220NL
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2007
Specification
Film-Deposition Method:Plasma CVD
Sources:SN-2 (SiN)
Max Sample Size:Φ8 inch
Substrate Heating:350℃ (default)

Auto LiFt-OFF [KLO-150CBU]

リフトオフ装置 [KLO-150CBU]
Manufacturer
Kanamex
Model
KLO-150CBU
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2016
Specification
Photoresist Swelling:80℃ NMP solution
Photoresist Removal:High-pressure jet NMP solution
Rinsing:IPA, pure water
                                           Drying:Spin-dry, N2 blow
                                           Max Sample Size:Φ6 inch

Etching

CCP-RIE [RIE-200NL]

CCP-RIE [RIE-200NL]
Manufacturer
Samco
Model
RIE-200NL
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2007
Specification
Plasma Excitation Method:Parallel plate
Power Output:300W
Process Gas:CHF3, CF4, SF6, Ar, O2, N2
Sample Stage Temp:Room temp
Max Sample Size:Φ8 inch

ICP-RIE [RIE-101iPH]

ICP-RIE [RIE-101iPH]
Manufacturer
Samco
Model
RIE-101iPH
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2007
Specification
Plasma Excitation Method:Inductive coupling
ICP Output:Max 1kW
Bias Output:Max 300W
Process Gas:Cl2, BCl3, Ar, O2, N2
Sample Stage Temp:-20℃~room temp
Max Sample Size:Φ4 inch

ICP-RIE [RV-APS-SE]

ICP-RIE [RV-APS-SE]
Manufacturer
Sumitomo Precision
Model
RV-APS-SE
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2012
Specification
Plasma Excitation Method:Inductive coupling
ICP Output:Max 3kW
Bias Output:Max 1kW
Process Gas:CHF3, CF4, C4F8, SF6, Ar, O2, He
Sample Stage Temp:-10~+40℃
Max Sample Size:Φ6 inch
Other: End point detector equipped

ICP-RIE [CE300I]

ICP-RIE装置 [CE300I]
Manufacturer
ULVAC
Model
CE300I
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2004
Specification
Plasma Excitation Method:Inductive coupling
ICP Output:Max 1kW
Bias Output:Max 300W
Process Gas:Ar, O2, SF6, Cl2, BCl3, CF4, CHF3
Sample Stage Temp:Room temp
Max Sample Size:Φ6 inch

Si Deep RIE [ASE-SRE]

シリコンDRIE装置 [ASE-SRE]
Manufacturer
Sumitomo Precision
Model
ASE-SRE
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2008
Specification
Plasma Excitation Method:Inductive coupling
ICP Output:Max 1kW
Bias Output:Max 100W
Process Gas:SF6,C4F8,Ar,O2
Sample Stage Temp:Room temp
Max Sample Size:Φ6 inch
Other: Bosch process available

ALE [PlasmaPro 100 ALE]

原子層エッチング装置 [PlasmaPro 100 ALE]
Manufacturer
Oxford Instruments
Model
PlasmaPro 100 ALE
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2020
Specification
Plasma Excitation Method:Inductive
ICP Output:Max 3kW
Bias Output:Max 300W
Process Gas:Cl2,BCl3,SF6,Ar,N2,O2
Sample Stage Temp:-30~+80℃
Max Sample Size:Φ6 inch
Other: End point detector equipped

Annealing

RTA [RTP-6 #1]

赤外線ランプ加熱装置 [RTP-6 #1]
Manufacturer
ADVANCE RIKO
Model
RTP-6
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2005
Specification
Heating Method:Upper side heating by inflared lamp
Process Temp:Room temp~1000℃
Heating Rate:<10℃/sec
Process Gas:N2, Ar+H2(3%), Ar, O2
Max Sample Size:Φ6 inch

RTA [RTP-6 #2]

赤外線ランプ加熱装置 [RTP-6 #2]
Manufacturer
ADVANCE RIKO
Model
RTP-6
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2021
Specification
Heating Method:Upper side heating by inflared lamp
Process Temp:<1100℃
Heating Rate:<10℃/sec
Process Gas:Ar, N2, Ar+H2(3%)
Max Sample Size:Φ6 inch

RTA [RTP-6 #3]

赤外線ランプ加熱装置 [RTP-6 #3]
Manufacturer
ADVANCE RIKO
Model
RTP-6
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2022
Specification
Heating Method:Upper side heating by inflared lamp
Process Temp:<1100℃
eating Rate:<10℃/sec
Process Gas:N2, Ar+H2(3%), O2
Max Sample Size:Φ6 inch

Observation

FE-SEM [S-4800]

FE-SEM [S-4800]
Manufacturer
Hitachi Hightec
Model
S-4800
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2007
Specification
Acceleration Voltage:0.5~30kV
Retarding:0.1~2kV
Magnification:20~800K
Resolution:1.0 nm (15 kV), 1.4 nm (1 kV)
Detector:SE
Max Sample Size:Φ6 inch

FE-SEM+EDX [S-4800]

FE-SEM+EDX [S-4800]
Manufacturer
Hitachi Hightec
Model
S-4800
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2003
Specification
Acceleration Voltage:0.5~30kV
Retarding:0.1~2kV
Magnification:20~800K
Resolution:1.0 nm (15 kV) , 1.4 nm (1 kV)
Detector:SE, BSE
Max Sample Size:Φ6 inch
EDX:HORIBA X-MAX80

FE-SEM+EDX [SU8000]

FE-SEM+EDX [SU8000]
Manufacturer
Hitachi Hightec
Model
SU8000
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2010
Specification
Acceleration Voltage:0.5~30kV
Retarding:0.1~2kV
Magnification:20~800K
Resolution:1.0 nm (15 kV) , 1.3 nm (1 kV)
Detector:SE, BSE
Max Sample Size:Φ4 inch
EDX:Bruker FQ5060

FE-SEM+EDX [SU8230]

FE-SEM+EDX [SU8230]
Manufacturer
Hitachi Hightec
Model
SU8230
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2014
Specification
Acceleration Voltage:0.5~30kV
Retarding:0.01~2kV
Magnification:20~1,000K
Resolution:0.8 nm (15 kV) , 1.1 nm (1 kV)
Detector:SE, BSE
Max Sample Size:Φ6 inch
EDX:HORIBA X-MAX80

Tabletop SEM+EDX [TM3000]

卓上電子顕微鏡 [TM3000]
Manufacturer
Hitachi Hightec
Model
TM3000
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2013
Specification
Acceleration Voltage:5/15 kV
Retarding: - 
Magnification:15~10K
Resolution: 
Detector:BSE
Max Sample Size:70mm
EDX:Bruker Xflash MIN

SPM [Jupiter XR]

走査型プローブ顕微鏡 [Jupiter XR]
Manufacturer
Oxford Instruments
Model
Jupiter XR
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2021
Specification
Measurement Mode:Shape/mechanical/electric/magnetic measurement, etc.
Scanning Range:90um x 90um
Stage Motion Range:200mm square
Max Sample Size:Φ8 inch

SPM [L-trace]

走査型プローブ顕微鏡 [L-trace]
Manufacturer
Hitachi Hightec
Model
L-trace
Location
Namiki MANA Bldg.
Overnight Operation
Installation Year
2006
Specification
Measurement Mode:contact/tapping AFM, friction force microscope measurement, etc.
Scanning Range:90um x 90um
Stage Motion Range: 
Max Sample Size:Φ6 inch

SPM [Nanoscope5]

走査型プローブ顕微鏡 [Nanoscope5]
Manufacturer
Bruker
Model
Nanoscope5
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
-
Specification
Measurement Mode:Contact AFM, tapping AFM, MFM, electrochemistry STM, liquid phase AFM
Scanning Range:
Stage Motion Range:
Max Sample Size:<Φ12mm

Laser Microscope [LEXT OLS4000]

レーザー顕微鏡 [LEXT OLS4000]
Manufacturer
OLYMPUS
Model
LEXT OLS4000
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2012
Specification
Light Source:405nm semiconductor laser
Resolution:XY:0.12um/Z:0.01um
Observation Mode:Laser observation, bright field, differencial interference observation
Max Sample Size:100mm square

Laser Microscope [VK-9700]

レーザー顕微鏡 [VK-9700]
Manufacturer
KEYENCE
Model
VK-9700
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2012
Specification
Light Source408nm semiconductor laser
Resolution:
Observation Mode:Laser observation, bright field
Max Sample Size:Φ100mm

Ion Sputter [E-1045]

イオンスパッタ [E-1045]
Manufacturer
Hitachi Hightec
Model
E-1045
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2008
Specification
Film Deposition Material:Pt, C
Max Sample Size:Φ60mm

Surface Profilometer [Dektak XT-A]

触針式プロファイラ [Dektak XT-A]
Manufacturer
Bruker
Model
Dektak XT-A
Location
Sengen Materials Reliability Bldg.
Overnight Operation
Installation Year
2021
Specification
Resolution:1Å(6.5um range)
Scanning Distance:55mm
Contact Pressure Range:0.03-15mg
Max Sample Size:Φ8 inch
Other:Automatic stage 3D mapping

Surface Profilometer [Dektak 6M]

触針式プロファイラー [Dektak 6M]
Manufacturer
Bruker
Model
Dektak 6M
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2004
Specification
Vertical Resolution:0.1nm
Vertical Scanning Distance:Max 262µm
Measurement Distance:50 µm~30 mm
Max Sample Size:Φ6 inch

Ellipsometer [MARY-102FM]

エリプソメータ [MARY-102FM]
Manufacturer
Five Lab
Model
MARY-102FM
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2007
Specification
Light Source:632nm He-Ne laser
Beam Aperture:0.8mm
Incidence Angle:50°, 60°, 70°
Max Sample Size:Φ4 inch
Other:Automatic mapping

Spectroscopic Ellipsometer [M2000]

分光エリプソメーター [M2000]
Manufacturer
J.A.Woollam
Model
M2000
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2010
Specification
Light Source:Deuterium halogen lamp
Spectroscopic Range:250~1000nm
Incidence Angle:45°~90°
Max Sample Size:Φ6 inch

Optical Film Mapper [F54-XY-200-UV]

顕微分光膜厚計 [F54-XY-200-UV]
Manufacturer
Filmetrics
Model
F54-XY-200-UV
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2020
Specification
Light Source:Deuterium halogen lamp
Wavelength:190~1100nm
Spot Aperture:<10um
Measurable Film Thickness:5nm~30um
Max Sample Size:6インチΦ

Thin-Film Stress Tester [FLX-2000-A]

薄膜応⼒測定装置 [FLX-2000-A]
Manufacturer
TOHO TECHNOLOGY
Model
FLX-2000-A
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2018
Specification
Measurement Method:Laser scan
Measurement Range:1~4000MPa
Measurement Reproducibility:1.3MPa (1σ)
Sample Size:Φ3, 6 or 8 inch
Other:3D mapping function

Room Temp. Prober [MX-200/B]

室温プローバー [MX-200B]
Manufacturer
Vector Semicon
Model
MX-200/B
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2007
Specification
Probe:Coaxial probe
Manipulator:4
I-V Measurement Terminal:4 unit
C-V Measurement Terminal:1 unit
Max Sample Size:Φ4 inch
Other:Voltage applicable stage

Room Temp. Prober [HMP-400]

室温プローバー [HMP-400]
Manufacturer
HiSOL
Model
HMP-400
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2008
Specification
Probe:Coaxial probe
Manipulator:4
I-V Measurement Terminal:4 unit
C-V Measurement Terminal:1 unit
Max Sample Size:Φ4 inch
Other:Stage heating function

Low Temp. Prober [GRAIL-408-32-B]

低温プローバー [GRAIL-408-32-B]
Manufacturer
NTE
Model
GRAIL-408-32-B
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
-
Specification
Sample Cooling Method:No refrigerant
Probe:Coaxial probe
Manipulator:4
I-V Measurement Terminal:4 unit
Max Sample Size:Φ4 inch
Temperature: 8K~300K (changeable)

Liquid N2 Prober [SB-LN2]

液体窒素プローバー [SB-LN2]
Manufacturer
Thermal Block
Model
SB-LN2
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2011
Specification
Sample Cooling Method: Liquid nitrogen
Probe:SMA probe
Manipulator:4
I-V Measurement Terminal:4 unit
Max Sample Size:20mm square
Temperature:77K~500K (changeable)

Wire Bonder [7476D #1]

ワイヤーボンダー [7476D #1]
Manufacturer
West Bond
Model
7476D
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2006
Specification
Bonding Method:Ultra sonic/ thermocompression wedge bond
Bonding Wedge:45°, 90°
Wire Material:Gold, aluminium
Work Holder Temperature:<300℃
Max Sample Size:50mm square

Wire Bonder [7476D #2]

ワイヤーボンダー [7476D #2]
Manufacturer
West Bond
Model
7476D
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2008
Specification
Bonding Method:Ultra sonic/ thermocompression wedge bond
Bonding Wedge:45°, 90°
Wire Material:Gold, aluminium
Work Holder Temperature:<300℃
Max Sample Size:50mm square

Dicing

Dicing Saw [DAD322]

ダイシングソー [DAD322]
Manufacturer
DISCO
Model
DAD322
Location
Sengen Materials Reliability Bldg.
Overnight Operation
-
Installation Year
2018
Specification
Dicing Blade:Diamond blade
Dicing Range:XY:<162mm
Max Sample Size:Φ6 inch

Dicing Saw [DAD3220]

ダイシングソー [DAD3220]
Manufacturer
DISCO
Model
DAD3220
Location
Namiki MANA Bldg.
Overnight Operation
-
Installation Year
2007
Specification
Dicing Blade:Diamond blade
Dicing Range:XY:<162mm
Max Sample Size:Φ6 inch

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  • 【Update】May. 26, 2023
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