Comparison Chart

EB Lithography

Instrument Name EB Lithography
[JBX-8100FS]
EB Lithography
[ELS-F125]
EB Lithography
[ELS-BODEN100]
Manufacturer JEOL Elionix Elionix
Location Sengen Sengen Namiki
Spec Acceleration Voltage 200kV 125kV 100kV
Current 5pA~200nA 100pA~5nA 100pA~20nA
Field Size

500um (default)

100, 250, 500um (default)

100, 250, 500, 1000mm (default)

Minimum Dot Pitch

0.25nm

0.1nm

0.2nm
Min Exposure Time 8nsec/dot 10nsec/dot(Resolution: 0.1nsec) 10nsec/dot(Resolution: 0.1nsec)
Field Stitching Accuracy Less than 20nm Less than 20nm Less than 30nm
Overlay Accuracy Less than 20nm Less than 25nm Less than 35nm
Maximum Sample Size φ8 inch φ6 inch φ8 inch
Image Detectors SE, BSE SE, BSE SE, BSE
Applicable CAD Format GDSII, DXF, etc. GDSII, DXF, etc. GDSII, DXF, etc.
Control Software jbxwriter Wecas, SEM-GUI elms
Other

12 Cassette Autoloader
Optical Microscope
(for surface observation)

  Single Cassette Autoloader

Optical Aligner (Direct Drawing, Maskless, Mask Aligner)

Instrument Name Laser Lithography
[DWL66+]
Maskless Lithography
[DL-1000]
Maskless Lithography
[DL-1000/NC2P]
Maskless Lithography
[MLA150]
Mask Aligner
[MA-6]
Manufacturer HEIDELBERG INSTRUMENT Nanosystem Solutions Nanosystem Solutions HEIDELBERG INSTRUMENT SÜSS MicroTec SE
Location Sengen Namiki Namiki Sengen Namiki
Spec Lithography Method Direct Laser Lithography DMD DMD DMD Photo Mask (Actual Size)
Lithography Modes Raster scan, Vector scan Step & repeat litho Scanning litho, step & repeat litho Scanning litho  
Light Source 375nm Semiconductor Laser 405nm Semiconductor Laser (h Line) 405nm Semiconductor Laser (h Line) 375nm Semiconductor Laser Hg Lamp (I Line, h Line, g Line)
Brightness 70mW 300mW/cm2 10W/cm2   15mW/cm2
Resolution 0.3µm(HiRes),
0.6µm(WH4mm),
0.8µm(WH5mm),
1.0µm(WH10mm)
1µm 1µm 1µm 0.75µm (Min width of isolated lines)
Positioning Accuracy Less than 0.5µm Less than 1µm

Less than 0.5µm

Less than ±1µm Less than 1µm
Overlay Accuracy Less than 0.5µm Less than 1µm

Less than 0.5µm下

0.5µm(top)、1um(bottom) Less than 1µm
Max Sample Size 8 inch square 4 inch square 8 inch square 8 inch square φ3inch
Applicable CAD Formats GDSII, DXF, etc. GDSII, DXF, etc. GDSII, DXF, etc.    
Alignment Function Auto/Manual Auto/Manual Auto/Manual   Manual
Other  

Max shot size: 960µm×720µm

Max shot size: 1024µm×500µm Mask size: 4~6 inch square  

Sputtering (RF/DC Sputtering)

Instrument Name Sputter
[JSP-8000]
Sputter
[CFS-4EP-LL #2]
Sputter
[CFS-4EP-LL #4]
Sputter
[CFS-4EP-LL #3]
Manufacturer ULVAC SHIBAURA MECHATRONICS SHIBAURA MECHATRONICS SHIBAURA MECHATRONICS
Location Sengen Namiki Namiki Sengen
Spec Method Magnetron sputtering Magnetron sputtering Magnetron sputtering Magnetron sputtering
Power Source DC x 2, RF x 1 DC x 2, RF x 1 DC x 2, RF x 1 DC x 1, RF x 2
Power Output 500W 500W 500W 500W
Cathodes φ4 inch×4 sets φ3 inch×4 sets
(1 for ferromagnetic)
φ3 inch×4 sets φ3 inch×4 sets
(1 for ferromagnetic)
Process Gases Ar,O2,N2 Ar、O2、N2 Ar、O2、N2 Ar,O2,N2
Max Sample Size φ6 inch φ6 inch φ8 inch φ8 inch
Substrate Heating Max 300℃ (settable) Max 300℃ (settable) Max 300℃ (settable) N/A
Sample Stage Cooling Available N/A N/A Available
Program Control N/A No. of steps: 10
No. of programs:10
No. of steps: 10
No. of programs:10
No. of steps: 10
No. of programs:50
Other

Co-sputtering (3 targets)
Reverse sputtering
Magnetic materials applicable

Co-sputtering (2 targets)
Reverse sputtering
Bias sputtering
Magnetic materials applicable
Co-sputtering (3 targets)
Reverse sputtering
Bias sputtering
Co-sputtering (2 targets)
Reverse sputtering
Bias sputtering
Magnetic materials applicable

Vapor Deposition (Electron Beam)

Instrument Name EB Evaporator
[RDEB-1206K]
EB Evaporator
[ADS-E86]
EB Evaporator
[MB-501010]
EB Evaporator
[ADS-E810]
Manufacturer R-DEC R-DEC EIKO ENGINEERING R-DEC
Location Sengen Sengen Namiki Namiki
Spec Acceleration Voltage 10kV 6kV 10kV 6kV
Max Emission

500mA

500mA

500mA 500mA
T-S Distance 500mm 500mm 700mm 500mm
Vacuum Level 10-5Pa 10-5Pa 10-5Pa 10-5Pa
Crucibles 20cc×12 20ccx6 10cc×10 20cc×10
Max Sample Size φ6 inch φ8 inch φ6 inch φ8 inch
Sample Stage Cooling Available Available N/A Available
Other Automatic multi-layer deposition Automatic multi-layer deposition Automatic multi-layer deposition Automatic multi-layer deposition
Materials Ti, Au, Pd, Cu, Ag, Cr, SiO2, MgO, etc. Ti, Au-Ge, Al, Ni, Au, Pt Ag, Pd, Au, Pt, Al, Ti, Cr, Ni, etc. Al, Ti, Ni, AuGe, Pt, Au, Pd, Ag, Cr, etc.

Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD)

Instrument Name Atomic Layer Deposition
[SUNALE R-150]
Atomic Layer Deposition
[AD-230LP]
SiO2 Plasma CVD
[PD-220NL]
SiN Plasma CVD
[PD-220NL]
Manufacturer Picosun Samco Samco Samco
Location Namiki Sengen Sengen Sengen
Spec Method Thermal or plasma ALD Thermal or plasma ALD Parallel plate plasma CVD Parallel plate plasma CVD
Sources TMA(Al2O3)
TDMAT(TiO2)
TDMAS(SiO2)
TDMAHf(HfO2)
ZrCp(ZrO2)
TMA(Al2O3, AlN)
TDMAT(TiO2, TiN)
BDEAS,(SiO2, SiN)
TEOS (SiO2) SN-2 (SiN)
Oxidant H2O, O2 Plasma H2O, O3, O2 Plasma O2Plasma  
Nitriding Agent   N2 Plasma, NH3 Plasma    
Max Sample Size φ6 inch φ8 inch φ8 inch φ8 inch
Substrate Heating Room temp~300℃(settable) Room temp~500℃(settable)   350℃ (default)
Power Output     30-300W 30-300W
Other     2 frequency CVD  

Flim Fabrication/Etching (RIE)

Instrument Name CCP-RIE
[RIE-200NL]
ICP-RIE
[RIE-101iPH]
ICP-RIE
[RV-APS-SE]
ICP-RIE
[CE300I]
Silicon DRIE
[ASE-SRE]
Atomic Layer Etching
[PlasmaPro 100 ALE]
ICP-RIE
[Spica #1]
ICP-RIE
[Spica #2]
Manufacturer Samco Samco Sumitomo Precision Products ULVAC Sumitomo Precision Products Oxford Instruments Sumitomo Precision Products Sumitomo Precision Products
Location Namiki Namiki Sengen Namiki Namiki Sengen Sengen Sengen
Spec Plasma Excitation Method Parallel plate Inductive coupling Inductive coupling Inductive coupling Inductive coupling Inductive coupling Inductive coupling Inductive coupling
Power Output 300W ・ICP:Max 1kW
・Bias: Max 300W
・ICP:Max 3kW
・Bias: Max 1kW
・ICP:Max 1kW
・Bias: Max 300W
・ICP:Max 1kW
・Bias: Max 100W
・ICP:Max 3kW
・Bias: Max 300W
・ICP:Max 1kW
・Bias: Max 300W
・ICP:Max 1kW
・Bias: Max 300W
Process Gases CHF3,CF4,SF6,Ar,
O2,N2
Cl2,BCl3,Ar,O2,N2 CHF3,CF4,C4F8,SF6,Ar,O2,He Ar, O2, SF6, Cl2, BCl3,
CF4, CHF3
SF6,C4F8,Ar,O2 Cl2,BCl3,SF6,Ar,
N2,O2
CHF3,CF4,C4F8,SF6,Ar,N2,O2 Cl2,SiCl4,SF6,Ar,
N2,O2
Sample Stage Temp Room temp. Low temp ~ 200℃ -10~+40℃ Room temp. Room temp. -30~+80 ℃ +10~+30 ℃ +10~+30 ℃
Max Sample Size φ8 inch φ4 inch φ4 inch φ6 inch φ6 inch φ4 inch φ6 inch φ6 inch
End Point Detector N/A N/A Available N/A N/A Available Available Available
Other         Bosch process available      

Thermal Treatment  (RTA)

Instrument Name Infrared Lamp Annealer
[RTP-6 #1]
Infrared Lamp Annealer
[RTP-6 #2]
Infrared Lamp Annealer
[RTP-6 #3]
Manufacturer ULVAC ULVAC ULVAC
Location Namiki Sengen Sengen
Spec Heating Method Top-side heating with infrared lamp Top-side heating with infrared lamp Top-side heating with infrared lamp
Process Temperature Less than 1000℃ Room temp. ~ 1000℃ Less than 1100℃
Heating Rate Less than 10℃/sec Less than 10℃/sec Less than 10℃/sec
Process Gases N2, O2, Ar+H2(3%) N2, Ar, Ar+H2(3%) N2, O2, Ar+H2(3%)
Maximum Sample Size

φ6 inch

φ6 inch

φ6 inch

Other   Computer control (combined with touch panel) Computer control (combined with touch panel)

Scanning Electron Microscope (SEM)

Instrument Name FE-SEM
[S-4800]
FE-SEM+EDX
[S-4800]
FE-SEM+EDX
[SU8000]
FE-SEM+EDX
[SU8230]
Tabletop SEM+EDX
[TM3000]
Manufacturer Hitachi High-Tech Hitachi High-Tech Hitachi High-Tech Hitachi High-Tech Hitachi High-Tech
Location Sengen Namiki Namiki Namiki Namiki
Spec Acceleration Voltage 0.5~30kV 0.5~30kV 0.5~30kV 0.5~30kV 5/15 kV
Retarding 0.1~2kV 0.1~2kV 0.1~2kV 0.01~2kV  
Magnification 20~800K 20~800K 20~800K 20~1,000K 15~10K
Resolution 1.0 nm (15 kV)
1.4 nm (1 kV)
1.0 nm (15 kV)
1.4 nm (1 kV)
1.0 nm (15 kV)
1.3 nm (1 kV)
0.8 nm (15 kV)
1.1 nm (1 kV)
 
Detectors SE、BSE SE、BSE SE、BSE SE、BSE BSE
Maximum Sample Size φ6 inch φ6 inch φ4 inch φ6 inch 70mm
EDX   HORIBA X-MAX80 Bruker FQ5060 HORIBA X-MAX80 Bruker Xflash MIN
Other     High-speed mapping   Low vacuum level

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  • 【Update】Jun. 27, 2024
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